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TA8276HQ Ver la hoja de datos (PDF) - Toshiba

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TA8276HQ Datasheet PDF : 14 Pages
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TA8276HQ
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Peak supply voltage (0.2 s)
DC supply voltage
Operation supply voltage
Output current (peak)
Power dissipation
Operation temperature
Storage temperature
VCC (surge)
50
V
VCC (DC)
25
V
VCC (opr)
18
V
IO (peak)
9
A
PD (Note 5)
125
W
Topr
−40~85
°C
Tstg
−55~150
°C
Note 5: Package thermal resistance θj-T = 1°C/W (typ.)
(Ta = 25°C, with infinite heat sink)
The absolute maximum ratings of a semiconductor device are a set of specified parameter values, which must not
be exceeded during operation, even for an instant. If any of these rating would be exceeded during operation, the
device electrical characteristics may be irreparably altered and the reliability and lifetime of the device can no
longer be guaranteed. Moreover, these operations with exceeded ratings may cause break down, damage and/or
degradation to any other equipment. Applications using the device should be designed such that each maximum
rating will never be exceeded in any operating conditions. Before using, creating and/or producing designs, refer to
and comply with the precautions and conditions set forth in this documents.
Electrical Characteristics
(unless otherwise specified, VCC = 13.2 V, f = 1 kHz, RL = 4 Ω, Ta = 25°C)
Characteristics
Quiescent current
Output power
Total harmonic distortion
Voltage gain
Voltage gain ratio
Output noise voltage
Ripple rejection ratio
Cross talk
Output offset voltage
Input resistance
Stand-by current
Stand-by control voltage
Mute control voltage
Mute attenuation
Symbol
Test
Circuit
Test Condition
ICCQ
⎯ VIN = 0
POUT MAX (1) ⎯ VCC = 14.4 V, max Power
POUT MAX (2) ⎯ VCC = 13.7 V, max Power
POUT (1)
⎯ VCC = 14.4 V, THD = 10%
POUT (2)
⎯ THD = 10%
THD
⎯ POUT = 5 W
GV
⎯ VOUT = 0.775 Vrms (0 dBm)
∆GV
⎯ VOUT = 0.775 Vrms (0 dBm)
VNO (1)
⎯ Rg = 0 Ω, DIN45405
VNO (2)
⎯ Rg = 0 Ω, BW = 20 Hz~20 kHz
R.R.
⎯
frip = 100 Hz, Rg = 620 Ω
Vrip = 0.775 Vrms (0 dBm)
C.T.
⎯
Rg = 620 Ω
VOUT = 0.775 Vrms (0 dBm)
VOFFSET
⎯
⎯
RIN
⎯
⎯
ISB
⎯ Stand-by condition
VSB H
⎯ Power: ON
VSB L
⎯ Power: OFF
(Note 2)
VM H
VM L
⎯ Mute: OFF
⎯ Mute: ON, R1 = 10 kΩ
ATT M
Mute: ON,
⎯ VOUT = 7.75 Vrms (20 dBm) at
Mute: OFF.
Min
⎯
⎯
⎯
⎯
17
⎯
24
−1.0
⎯
⎯
40
⎯
−150
⎯
⎯
3.0
0
0
80
Typ.
200
35
31
23
20
0.02
26
0
0.12
0.10
50
65
0
90
2
⎯
⎯
Open
⎯
90
Max Unit
400 mA
⎯
⎯
W
⎯
⎯
0.2
%
28
dB
1.0
⎯
mVrms
0.35
⎯
dB
⎯
dB
150 mV
⎯
kΩ
10
µA
VCC
V
1.5
⎯
0.5
V
⎯
dB
Note 2: Muting function have to be controlled by open and low logic, which logic is a transistor, FET and µ-COM port
of IMUTE > 250 µA ability.This means than the mute control terminal : pin 22 must not be pulled-up.
8
2004-05-10

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