TA8213K Ver la hoja de datos (PDF) - Toshiba

Número de pieza

componentes Descripción

Fabricante

TA8213K

Audio Power Amplifier

Toshiba 

TA8213K

Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Supply voltage

Output current (Peak/ch)

Power dissipation

Operating temperature

Storage temperature

VCC

30

V

IO (peak)

2

A

PD (Note)

15

W

Topr

-20~75

°C

Tstg

-55~150

°C

Note: Derated above Ta = 25°C in the proportion of 200 mW/°C.

Electrical Characteristics

(unless otherwise specified, VCC = 20 V, RL = 8 W, Rg = 600 W, f = 1 kHz, Ta = 25°C)

Characteristics

Quiescent current

Output power

Total harmonic distortion

Voltage gain

Input resistance

Ripple rejection ratio

Output noise voltage

Symbol

ICCQ

Pout (1)

Pout (2)

THD

Gv

RIN

R.R.

Vno

Test

Circuit

Test Condition

¾ Vin = 0

¾ THD = 10%

¾ THD = 1%

¾ Pout = 2 W

¾ Vout = 0.775 Vrms

¾

¾

¾

Rg = 0, fripple = 100 Hz,

Vripple = 0.775 Vrms

¾

Rg = 10 kW,

BW = 20 Hz~20 kHz

Min Typ. Max Unit

¾

45

65

mA

5.0

6.0

¾

W

¾

4.5

¾

¾

0.1 0.7

%

32.5 34.0 35.5 dB

¾

30

¾

kW

-45 -57 ¾

dB

¾ 0.14 0.3 mVrms

Test Circuit

RIPPLE

FILTER

4

VCC

7

BIAS

PROTECTOR

C1

1.0 mF

2

INPUT

400 W

1

NF

Amp

20 kW

VCC

OUTPUT C5

6

1000 mF

RL

3

Pre-GND

5

PW-GND

Cautions

This IC is not proof enough against a strong E-M field by CRT which may cause malfunction such as leak.

Please set the IC keeping the distance from CRT.

2

2002-02-13

Share Link: