TA4011AFE(TE85L) Ver la hoja de datos (PDF) - Toshiba
Número de pieza
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Fabricante
TA4011AFE(TE85L) Datasheet PDF : 4 Pages
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TA4011AFE
Electrical Characteristics (Ta = 25°C, Zg = Zl = 50 Ω)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Circuit current
Band width
Insertion gain
Noise figure
Isolation
Input return loss
Output return loss
Output power at 1 dB gain compression
ICC
BW
⎪S21⎪2
NF
⎪S12⎪2
⎪S11⎪2
⎪S22⎪2
Po1dB
VCC = 2 V, non carrier
VCC = 2 V
VCC = 2 V, f = 1.5 GHz
VCC = 2 V, f = 1.5 GHz
VCC = 2 V, f = 1.5 GHz
VCC = 2 V, f = 1.5 GHz
VCC = 2 V, f = 1.5 GHz
VCC = 2 V, f = 1.5 GHz
2.5
(Note3) 2.2
8
⎯
⎯
⎯
⎯
⎯
3.5
2.4
10
6.5
−22
−6.5
−5.5
−6
4.5 mA
⎯ GHz
⎯
dB
8
dB
⎯
dB
⎯
dB
⎯
dB
⎯ dBmW
Note3: BW is the frequency of 3dB down from ⎪S21⎪2 at 1.5 GHz.
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
RF Test Circuit (top view)
VCC
100 pF
1
1000 pF
10000 pF
2
GND
RF IN
1000 pF
3
1000 pF
5
RF OUT
L
4
L: 3.5 nH
Notice
The circuits and measurements contained in this document are given only in the context of as examples of
applications for these products.
Moreover, these example application circuits are not intended for mass production, since the high-frequency
characteristics (the AC characteristics) of these devices will be affected by the external components which the
customer uses, by the design of the circuit and by various other conditions.
It is the responsibility of the customer to design external circuits which correctly implement the intended
application, and to check the characteristics of the design.
TOSHIBA assume no responsibility for the integrity of customer circuit designs or applications.
Equivalent Circuit
1
5
4
3
2
2
2014-03-01
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