T35L3232B Ver la hoja de datos (PDF) - Taiwan Memory Technology

Número de pieza

componentes Descripción

Fabricante

T35L3232B

SYNCHRONOUS BURST SRAM 32K x 32 SRAM

Taiwan Memory Technology 

tm TE

CH

DQ

Z0 = 50 ohm

50

ohm

Vt = 1.5V

Fig. 1 output load equivalent

Preliminary T35L3232B

DQ

351

ohm

3.3V

317

ohm

5 pF

Fig. 2 output load equivalent

Taiwan Memory Technology, Inc. reserves the right P.11

to change products or specifications without notice.

Publication Date: FEB. 2000

Revision:0.A

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