T2035H-600GRG Ver la hoja de datos (PDF) - STMicroelectronics
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T2035H-600GRG Datasheet PDF : 10 Pages
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T2035H Series
Characteristics
Figure 9. Relative variation of critical rate of Figure 10. Relative variation of critical rate of
decrease of main current (di/dt)c vs
decrease of main current (di/dt)c
reapplied (dV/dt)c
versus junction temperature
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
(dI/dt)c [Tj] / (dI/dt)c [Tj=125°C]
8
7
6
1.2
5
1.0
4
0.8
3
0.6
0.4
2
0.2
0.0
0.1
dV/dt (V/µs)
1.0
10.0
1
Tj(°C)
0
100.0
25
50
75
100
125
150
Figure 11. Leakage current versus junction
temperature for different values of
blocking voltage (typical values)
IDRM/IRRM(mA)
1.E+01
1.E+00
VDRM=VRRM=600 V
VDRM=VRRM=400 V
1.E-01
VDRM=VRRM=200 V
1.E-02
1.E-03
1.E-04
50
Tj(°C)
75
100
125
150
Figure 12. Acceptable repetitive peak off-state
voltage versus case-ambient
thermal resistance
Rth(c-a)(°C/W)
10
9
8
7
6
5
4
3
2
1
0
300
350
Rth(j-c)=1°C/W
TJ=150°C
VDRM/VRRM(V)
400
450
500
550
600
Figure 13. D2PAK junction to ambient thermal
resistance versus copper surface
under tab (PCB FR4, copper
thickness 35 µm)
Rth(j-a)(°C/W)
80
70
D²PAK
60
50
40
30
20
10
0
0
SCU(cm²)
5
10
15
20
25
30
35
40
5/10
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