T1620-400W Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
T1620-400W Datasheet PDF : 5 Pages
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T1620W / 1630W
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-a)
Rth(j-c)
Junction to ambient
Junction to case for A.C (360° conduction angle)
Value
50
2.5
Unit
°C/W
°C/W
GATE CHARACTERISTICS (maximum values)
PG (AV)= 1 W PGM = 10 W (tp = 20 µs) IGM = 4 A (tp = 20 µs)
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
T1620 T1630 Unit
IGT
VD=12V (DC) RL=33Ω
Tj= 25°C I-II-III MAX 20
30
mA
VGT
VD=12V (DC) RL=33Ω
Tj= 25°C I-II-III MAX
1.5
V
VGD
VD=VDRM RL=3.3kΩ
Tj= 125°C I-II-III MIN
0.2
V
tgt
VD=VDRM IG = 500mA
Tj= 25°C I-II-III TYP
2
µs
dlG/dt= 3Aµs
IH *
IT= 250mA Gate open
Tj= 25°C
MAX 35
50
VTM * ITM= 22.5A tp= 380µs
Tj= 25°C
MAX
1.5
V
IDRM
IRRM
VDRM rated
VRRM rated
Tj= 25°C
Tj= 125°C
MAX
10
µA
MAX
2
mA
dV/dt * Linear slope up to
Tj= 125°C
VD=67%VDRM Gate open
MIN 200
300 V/µs
(dV/dt)c * (dI/dt)c = 9 A/ms (see note) Tj= 125°C
MIN 10
20 V/µs
* For either polarity of electrode A2 voltage with reference to electrode A1.
Note : In usual applications where (dI/dt)c is below 9 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a
snuber R-C network accross T1620W / T1630W triacs.
2/5
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