DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

T10B080E60 Ver la hoja de datos (PDF) - Littelfuse, Inc

Número de pieza
componentes Descripción
Fabricante
T10B080E60
Littelfuse
Littelfuse, Inc Littelfuse
T10B080E60 Datasheet PDF : 4 Pages
1 2 3 4
SIDACtor® Protection Thyristors
Baseband Protection (Voice-DS1)
Surge Ratings
Series
8x201
1.2x502
A min
B
250
Notes:
1 Current waveform in μs
2 Voltage waveform in μs
IPP
5x3101
10x7002
A min
125
10x10001
10x10002
A min
100
ITSM
50/60 Hz
A min
30
di/dt
A/μs max
500
- Peak pulse current rating (IPP) is repetitive and guaranteed for the life of the product.
- IPPSBUJOHTBQQMJDBCMFPWFSUFNQFSBUVSFSBOHFPG$UP $
- The device must initially be in thermal equilibrium with -40°C < TJ < ¡$
Thermal Considerations
Package
DO-201AD
Symbol
TJ
TS
R0JA
Parameter
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance: Junction to Ambient
Value
UP 
UP 
120
Unit
°C
°C
°C/ W
V-I Characteristics
+I
IT
IS
IH
IDRM
-V
+V
VT
VDRM
VS
-I
Normalized VS Change vs. Junction Temperature
14
12
10
8
6
4
25 °C
2
0
-4
-6
-8
-40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature (TJ) – °C
tr x td Pulse Waveform
tr = rise time to peak value
100
Peak td = decay time to half value
Value
Waveform = tr x td
50
Half Value
0
0 tr
td
t – Time (μs)
Normalized DC Holding Current vs. Case Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-40 -20
25°C
0 20 40 60 80 100 120 140 160
Case Temperature (TC) - ºC
© 2011 Littelfuse, Inc.
Specifications are subject to change without notice.
Please refer to www.littelfuse.com for current information.
181
Revised: February 22, 2011

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]