SWAF3L Ver la hoja de datos (PDF) - SEOUL SEMICONDUCTOR
Número de pieza
componentes Descripción
Fabricante
SWAF3L Datasheet PDF : 13 Pages
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Rev. 5.00
3. Absolute Maximum Ratings
Parameter
Symbol
Value
Power Dissipation
Pd*1
280
Forward Current
IF
80
Peak Forward Current
I *2
FM
200
Reverse Voltage
VR
5
Operating Temperature
Topr
-30 ~ +85
Storage Temperature
Tstg
-40 ~ +100
Thermal Resistance
(junction to solder)
RΘj-s
70
Junction Temperature
Tj max
125
*1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product.
*2 IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10
SWAF3L
(Ta = 25°C)
Unit
mW
mA
mA
V
°C
°C
°C/W
°C
4. Electro-Optical Characteristics
(Ta = 25°C)
Item
Symbol
Condition
Min
Typ
Max
Unit
Forward Voltage
VF
IF = 20 mA/CHIP
2.9
3.2
3.6
V
Reverse Current
IR
VR = 5 V
-
-
100
µA
Thermal Resistance(Junction to solder) RΘj-s IF = 20 mA/CHIP
70
℃/W
Rank M1
4100
-
4400
Rank M4
4400
-
4700
Luminous Intensity*1
Rank M7
Rank N0
IV
IF = 60 mA
4700
-
5000
mcd
5000
-
5300
Rank N3
5300
-
5600
Viewing Angle *2
Rank b
2θ1/2
x
y
IF = 60 mA
120
˚
0.264
-
0.296
0.248
-
0.295
Color Coordinates *3
Rank e
x
y
IF = 60 mA
0.287
-
0.311
-
0.276
-
0.315
x
Rank f
y
0.307
-
0.330
0.294
-
0.339
Life Time*4
Ta =25℃, IF=20 mA/CHIP
15000 hrs
-
*1 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
Luminous Intensity Measurement allowance is ±10%.
*2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
*3 Measurement Uncertainty of the Color Coordinates is ±0.01
*4 Estimated time to 50% degradation of initial luminous intensity.(A chip = 20mA)
* Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above. All measurements were made under the standardized environment of Seoul
Semiconductor.
SSC-QP-7-03-44(갑)
3
SEOUL SEMICONDUCTOR CO., LTD.
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