SWAF0H Ver la hoja de datos (PDF) - SEOUL SEMICONDUCTOR
Número de pieza
componentes Descripción
Fabricante
SWAF0H Datasheet PDF : 15 Pages
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Rev. 1.00
3. Absolute Maximum Ratings
Parameter
Symbol
Value
Power Dissipation
Pd*1
120
Forward Current
IF
30
Peak Forward Current
I *2
FM
100
Reverse Voltage
VR
5
Operating Temperature
Topr
-30 ~ +85
Storage Temperature
Tstg
-40 ~ +100
Junction Temperature
Tj
125
*1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product.
*2 IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10
SWAF0H
(Ta = 25°C)
Unit
mW
mA
mA
V
°C
°C
°C
4. Electro-Optical Characteristics
(Ta = 25°C)
Item
Forward Voltage*
Reverse Current
Luminous Intensity*1
Viewing Angle *2
Color Coordinates *3
Symbol Condition
Min
Typ
Max
Unit
Rank Y
Rank Z
Rank A
Rank J2
Rank J3
Rank J4
Rank J5
Rank b
Rank e
Rank f
2.7
-
3.0
VF
IF = 20 mA
3.0
-
3.3
V
3.3
-
3.7
IR
VR = 5 V
-
-
50
µA
1200
-
1300
IV
IF = 20 mA
1300
1400
-
-
1400
mcd
1500
1500
-
1600
2θ1/2
IF = 20 mA
120
˚
x
0.264
-
0.296
y
0.248
-
0.295
x
y
IF = 20 mA
0.287
0.276
-
-
0.311
0.315
-
x
0.307
-
0.330
y
0.294
-
0.339
*1 luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED
package. Luminous Intensity Measurement allowance is ±10%.
*2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
*3 Measurement Uncertainty of the Color Coordinates is ±0.01
* Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above.
All measurements were made under the standardized environment of Seoul Semiconductor.
SSC-QP-7-03-44(갑)
3
SEOUL SEMICONDUCTOR CO., LTD.
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