SWAF09 Ver la hoja de datos (PDF) - SEOUL SEMICONDUCTOR
Número de pieza
componentes Descripción
Fabricante
SWAF09 Datasheet PDF : 15 Pages
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Rev. 1.00
3. Absolute Maximum Ratings
Parameter
Symbol
Value
Power Dissipation
Pd*1
120
Forward Current
IF
30
Peak Forward Current
IFM*2
100
Reverse Voltage
VR
5
Operating Temperature
Topr
-30 ~ +85
Storage Temperature
Tstg
-40 ~ +100
Junction Temperature
Tj
125
*1 Care is to be taken that Power Dissipation does not exceed the Absolute Maximum Rating of the product.
*2 IFM conditions : Pulse width TW ≤ 0.1ms, Duty ratio ≤ 1/10
SWAF09
(Ta = 25°C)
Unit
mW
mA
mA
V
°C
°C
°C
4. Electro-Optical Characteristics
(Ta = 25°C)
Item
Forward Voltage*
Reverse Current
Luminous Intensity*1
Viewing Angle *2
Color Coordinates *3
Symbol Condition
Min
Typ
Max
Unit
Rank Y
Rank Z
Rank A
Rank J1
Rank J2
Rank J3
Rank J4
Rank J5
Rank b
Rank e
Rank f
2.7
-
3.0
VF
IF = 20 mA
3.0
-
3.3
V
3.3
-
3.7
IR
VR = 5 V
-
-
50
µA
1100
-
1200
1200
-
1300
IV
IF = 20 mA
1300
-
1400
mcd
1400
-
1500
1500
-
1600
2θ1/2
IF = 20 mA
120
˚
x
0.264
-
0.296
y
0.248
-
0.295
x
0.287
-
0.311
IF = 20 mA
-
y
0.276
-
0.315
x
0.307
-
0.330
y
0.294
-
0.339
*1 The luminous intensity IV is measured at the peak of the spatial pattern which may not be aligned with the mechanical axis of the LED package.
Luminous Intensity Measurement allowance is ±10%.
*2 θ1/2 is the off-axis where the luminous intensity is 1/2 of the peak intensity.
*3 Measurement Uncertainty of the Color Coordinates is ±0.01
* Note : All products confirm to the listed minimum and maximum specifications for electric and optical characteristics, when operated at
20mA within the maximum ratings shown above.
All measurements were made under the standardized environment of Seoul Semiconductor.
SSC-QP-7-03-44(갑)
3
SEOUL SEMICONDUCTOR CO., LTD.
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