SW640 Ver la hoja de datos (PDF) - Unspecified
Número de pieza
componentes Descripción
Fabricante
SW640 Datasheet PDF : 6 Pages
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SAMWIN
SW640
VGS
top:10V
9V
8V
7V
6V
5.5V
10
5V
bottom:5.0V
25oC
10
150oC
1
∗ Note:
1.250us pulse test
2.T =25oC
C
0.1
0.1
1
10
V ,Drain-to-Source voltage [V]
DS
Fig 1. On-State Characteristics
1.0
0.8
0.6
V =20V
GS
V =10V
GS
0.4
0.2
∗ Note:T =25oC
J
0.0
0
10
20
30
40
50
60
I , Drain Current[A]
D
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
4000
3750
3500
3250
3000
2750
2500
2250
2000
1750
1500
1250
1000
750 ∗ Note:
500 1.V =0V
GS
250 2.f=1MHz.
0
0.1
Ciss = Cgs+Cgd(Cds=shorted)
Coss= Cds+Cgd
Crss = Cgd
C
iss
C
oss
C
rss
1
10
V ,Drain-Source Voltage [V]
DS
Fig 5. Capacitance Characteristics
(Non-Repetitve)
3/6
REV0.2
1
∗ Note:
1.V =50V
DS
2.250us pulse test.
0.1
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Fig 2. Transfer Characteristics
10
150oC 25oC
1
∗ Note:
1.v =0v
GS
2.250us test
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
V ,Source-Drain Voltage[V]
SD
Fig 4. On State Current vs.
Allowable Case Temperature
12
V =160V
DS
10
V =100V
DS
8
V =40V
DS
6
4
2
Note:I =18A
D
0
0
10
20
30
40
50
Q ,Total Gate Charge [nC]
G
Fig 6. Gate Charge Characteristics
05.6.9
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