NEZ7785-4D1-4DD Ver la hoja de datos (PDF) - NEC => Renesas Technology

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NEZ7785-4D1-4DD

15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

NEC => Renesas Technology 

15 W C-BAND Po GaAs FET NEZ SERIES

NEZ-15D/15DD

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

CHARACTERISTIC

Drain to Source Voltage

Gate to Source Voltage

Gate to Drain Voltage

Drain Current

Gate Current

Total Power Dissipation

Channel Temperature

Storage Temperature

SYMBOL

VDS

VGS

VGD

ID

IG

PT*

Tch

Tstg

RATINGS

15

–12

–18

18

100

100

175

–65 to +175

UNIT

V

V

V

A

mA

W

˚C

˚C

* TC = 25 ˚C

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

CHARACTERISTIC

Saturated Drain Current

Pinch-off Voltage

Trans-Conductance

Gate to Drain Voltage

Thermal Resistance

SYMBOL

IDSS

VP

gm

BVGDO

Rth

Part No.

NEZ-15D

NEZ-15DD

NEZ-15D

NEZ-15DD

NEZ-15D

NEZ-15DD

NEZ-15D

NEZ-15DD

NEZ-15D

NEZ15DD

MIN.

4.0

TYP.

9.2

MAX.

14.0

UNIT

A

TEST CONDITIONS

VDS = 2.5 V, VGS = 0 V

–3.5 –2.2 –0.5

V

VDS = 2.5 V, IDS = 60 mA

–

5200

–

mS VDS = 2.5 V, IDS = 4 A

20

22

–

V

IGD = 60 mA

–

1.3

1.5

˚C/W Channel to Case

2

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