NE8500100 Ver la hoja de datos (PDF) - NEC => Renesas Technology
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NE8500100 Datasheet PDF : 6 Pages
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NE85001 SERIES
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage
Gate to Drain Voltage
Gate to Source Voltage
Total Power Disipation(*)
Drain Current
Gate Current
Channel Temperature
Storage Temperature
VDSX
VGDX
VGSX
PT
ID
IG
Tch
Tstg
15
–18
–12
6.0
1.12
6.0
175
–65 to 175
RECOMMENDING OPERATION RANDGE
CHARACTERISTIC
Drain to Source Voltage
Channel Temperature
Input Power
Gate Resistance
SYMBOL
VDS
Tch
Gcomp
Rg
MIN.
9
–
–
–
TYP.
–
–
–
–
MAX. UNIT
10
V
130
˚C
3 dBcomp
1
kΩ
V
V
V
W
A
mA
˚C
˚C
*TC = 25 ˚C
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Saturated Drain Current
Pinch-off Voltage
Transconductance
Thermal Resistance
SYMBOL
Idss
VP
gm
Rth
MIN.
430
–3.0
–
–
TYP.
–
–
300
–
MAX.
860
–1.0
–
30
UNIT
mA
V
mS
˚C/W
TEST CONDITIONS
Vds = 2.5 V, Vgs = 0 V
Vds = 2.5 V, Ids = 4 mA
Vds = 2.5 V, Ids = Idss
PERFORMANCE SPECIFICATIONS (TA = 25 ˚C)
PART NUMBER
PACKAGE CODE
CHARACTERISTIC SYMBOL
Output Power
PO
Gate to source
Igs
Current
NE8500100
NE8500100-WG
NE8500100-RG
CHIP
MIN. TYP. MAX.
28.5
–
–
–2.0
–
2.0
NE8500199
MIN.
28.5
99
TYP.
–
MAX.
–
–2.0
–
2.0
UNIT TEST CONDITIONS
dBm
mA
f = 7.2 GHz
Vds = 10 V
Ids = 200 mA set
Rg = 1 kΩ
Pin = 21.0 dBm(*)
Linear Gain
GL
–
9
–
–
9
–
dB Pin ≤ 11 dBm (**)
* Pin for Pout specification.
** The same conditions as the above except this.
2
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