SUP85N15-21 Ver la hoja de datos (PDF) - Vishay Semiconductors

Número de pieza

componentes Descripción

Fabricante

SUP85N15-21

N-Channel 150-V (D-S) 175 °C MOSFET

Vishay Semiconductors 

New Product

SUP85N15-21

Vishay Siliconix

N-Channel 150-V (D-S) 175_C MOSFET

PRODUCT SUMMARY

V(BR)DSS (V)

150

rDS(on) (W)

0.021 @ VGS = 10 V

TO-220AB

ID (A)

85

D

FEATURES

D TrenchFETr Power MOSFETS

D 175_C Junction Temperature

APPLICATIONS

D Primary Side Switch

D Automotive

- 42-V EPS and ABS

- DC/DC Conversion

- Motor Drives

DRAIN connected to TAB

GD S

Top View

SUP85N15-21

G

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Limit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 175_C)

Pulsed Drain Current

Avalanche Current

Repetitive Avalanche Energyb

Maximum Power Dissipationb

Operating Junction and Storage Temperature Range

TC = 25_C

TC = 125_C

L = 0.1 mH

TC = 25_C

TA = 25_Cd

VDS

VGS

ID

IDM

IAR

EAR

PD

TJ, Tstg

150

"20

85

50

180

50

125

300c

2.4

-55 to 175

Unit

V

A

mJ

W

_C

THERMAL RESISTANCE RATINGS

Parameter

Junction-to-Ambient—Free Air

Junction-to-Case (Drain)

Notes

a. Package limited.

b. Duty cycle v 1%.

c. See SOA curve for voltage derating.

Document Number: 72003

S-21715—Rev. A, 07-Oct-02

Symbol

RthJA

RthJC

Limit

62.5

0.4

Unit

_C/W

www.vishay.com

1

Share Link: