SUP50N03-5M1P Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
SUP50N03-5M1P Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
VGS = 10 V thru 4 V
80
VGS = 3 V
60
40
0.007
0.006
0.005
0.004
20
SUP50N03-5m1P
Vishay Siliconix
VGS = 4.5 V
VGS = 10 V
0
0.0
0.5
1.0
1.5
2.0
VDS - Drain-to-Source Voltage (V)
Drain to Source Voltage vs. ID
5
0.003
0
0.015
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
4
0.012
3
TC = 25 °C
2
1
0
0.0
180
TC = 125 °C
0.6
1.2
1.8
TC = - 55 °C
2.4
3.0
VGS - Gate-to-Source Voltage (V)
Transfer Characteristics
135
TC = - 55 °C
90
TC = 25 °C
TC = 125 °C
45
0.009
0.006
0.003
TJ = 150 °C
TJ = 25 °C
0.000
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
10
ID = 20 A
8
VDS = 15 V
6
VDS = 8 V
VDS = 24 V
4
2
0
0
6
12
18
24
30
ID - Drain Current (A)
Transconductance
Document Number: 66570
S10-1050-Rev. A, 03-May-10
0
0
10
20
30
40
50
Qg - Total Gate Charge (nC)
Gate Charge
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3
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