SUM110N03-04P Ver la hoja de datos (PDF) - Vishay Semiconductors
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SUM110N03-04P Datasheet PDF : 4 Pages
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SPICE Device Model SUM110N03-04P
Vishay Siliconix
SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Forward Voltage a
Dynamic b
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Turn-On Delay Time c
Rise Time c
Turn-Off Delay Time c
Fall Time c
VGS(th)
ID(on)
rDS(on)
gfs
VSD
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDS = VGS, ID = 250 µA
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 20 A
VGS = 10 V, ID = 20 A, TJ = 125°C
VGS = 10 V, ID = 20 A, TJ = 175°C
VGS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 20 A
IS = 100 A, VGS = 0 V
VGS = 0 V, VDS = 25 V, f = 1 MHz
VDS = 15 V, VGS = 4.5 V, ID = 50 A
VDD = 15 V, RL = 0.30 Ω
ID ≅ 50 A, VGEN = 10 V, RG = 2.5 Ω
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Simulated Measured
Data
Data
1.8
1375
0.0033
0.0049
0.0058
0.0052
70
0.92
0.0033
0.0052
1.2
5194
780
292
43
18
16
13
15
31
31
5100
860
430
40
18
16
12
12
40
10
Unit
V
A
Ω
S
V
Pf
NC
Ns
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Document Number: 72423
09-Jun-04
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