SUD50N06-16 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SUD50N06-16 Datasheet PDF : 5 Pages
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SUD50N06-16
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
2.5
100
VGS = 10 V
ID = 20 A
2.0
1.5
10
1.0
Source-Drain Diode Forward Voltage
TJ = 150_C
TJ = 25_C
0.5
0.0
- 50 - 25 0
25 50 75 100 125 150 175
TJ - Junction Temperature (_C)
THERMAL RATINGS
Maximum Avalanche Drain Current
vs. Case Temperature
60
1
0
0.3
0.6
0.9
1.2
VSD - Source-to-Drain Voltage (V)
1000
Safe Operating Area
50
Limited by
40
Package
30
20
10
Limited by rDS(on)
100
10
1
TC = 25_C
Single Pulse
10 ms
100 ms
1 ms
10 ms
100 ms
dc
0
0
25 50 75 100 125 150 175
TC - Case Temperature (_C)
0.1
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.02
0.05
Single Pulse
0.01
10 - 4
10 - 3
www.vishay.com
4
10 - 2
10 - 1
1
10
Square Wave Pulse Duration (sec)
100
1000
Document Number: 72396
S-31921—Rev. A, 15-Sep-03
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