SUD50N06-16 Ver la hoja de datos (PDF) - Vishay Semiconductors
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SUD50N06-16 Datasheet PDF : 5 Pages
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New Product
SUD50N06-16
Vishay Siliconix
N-Channel 60-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
60
0.016 @ VGS = 10 V
TO-252
FEATURES
ID (A)c
D TrenchFETr Power MOSFET
APPLICATIONS
50
D Automotive
- ABS
- EPS
D
- Motor Drives
D Industrial
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N06-16
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current, Single Pulse
Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 125_C
L = 0.1 mH
TC = 25_C
TA = 25_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
60
"20
50c
28
100
50c
35
61
88b
3a
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambienta
Junction-to-Case
t v 10 sec
20
Steady State
RthJA
40
RthJC
1.4
25
50
_C/W
1.7
Notes
a. Surface Mounted on 1†x1†FR4 Board.
b. See SOA curve for voltage derating.
c. Calculate continuous current based on maximum allowable junction temperature when using infinite heat sink. Package limitation current is 50 A.
Document Number: 72396
S-31921—Rev. A, 15-Sep-03
www.vishay.com
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