STW26NM60N(2016) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STW26NM60N
(Rev.:2016)

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II Power MOSFET in a TO-247 package

STMicroelectronics 

STW26NM60N

N-channel 600 V, 0.135 Ω typ., 20 A MDmesh™ II

Power MOSFET in a TO-247 package

Datasheet - production data

3

2

1

TO-247

Figure 1: Internal schematic diagram

D(2)

G(1)

Features

Order code

STW26NM60N

VDS

600 V

RDS(on) max

0.165 Ω

ID

20 A

 100% avalanche tested

 Low input capacitance and gate charge

 Low gate input resistance

Applications

 Switching applications

Description

This device is an N-channel Power MOSFET

developed using the second generation of

MDmesh™ technology. This revolutionary Power

MOSFET associates a vertical structure to the

company’s strip layout to yield one of the world’s

lowest on-resistance and gate charge. It is

therefore suitable for the most demanding high

efficiency converters.

S(3)

Order code

STW26NM60N

AM01475v1_no Tab_noZen

Table 1: Device summary

Marking

Package

26NM60N

TO-247

Packaging

Tube

December 2016

DocID025246 Rev 2

This is information on a product in full production.

1/12

www.st.com

Share Link: