STV7618
Revision follow-up
Target specification
05/2000
version 1.1
document creation
05/2000
version 1.2
few changes in figures
07/2000
version 1.3
addition of pads dimensions/coordinates,
few changes in figures and electrical characteristics
02/2001
version 1.4
TBD mentions replaced with values for Vouthl and Voutlh
Datasheet
06/2001
version 4.0
general update
10/2001
version 4.1
addition of die photo in cover page
new pads dimensions
04/2002
version 4.2
Cover page
features related to output diode current deleted
New values for Source/sink output MOS: -40/30mA
Absolute maximum ratings
IPOUT values -150/150mA
added definition and values for IDOUT -200/300mA
Addition of note 4: Transient current. Spike current duration inferior to 300ns.
Tested wafer disclaimer
chapter added
2/15
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