40N2LH5(2008) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

40N2LH5
(Rev.:2008)

N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET

STMicroelectronics 

Electrical characteristics

STD40N2LH5 - STU40N2LH5

Table 6. Switching on/off (resistive load)

Symbol

Parameter

Test conditions

td(on)

tr

Turn-on delay time

Rise time

VDD= 10 V, ID= 20 A,

RG= 4.7 Ω, VGS= 10 V

(Figure 2 and Figure 7)

td(off)

tf

Turn-off delay time

Fall time

VDD= 10 V, ID= 20 A,

RG= 4.7 Ω, VGS= 10 V

(Figure 2 and Figure 7)

Min. Typ. Max. Unit

TBD

ns

TBD

ns

TBD

ns

TBD

ns

Table 7.

Symbol

Source drain diode

Parameter

Test conditions

ISD

ISDM

VSD

trr

Qrr

IRRM

Source-drain current

Source-drain current (pulsed)(1)

Forward on voltage

ISD= 20 A, VGS=0

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 40 A,

di/dt =100 A/µs,

VDD= 20 V, Tj = 25 °C

(Figure 4)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

40 A

160 A

1.1 V

TBD

ns

TBD

nC

TBD

A

4/12

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