STTH602C Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STTH602C Datasheet PDF : 9 Pages
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Characteristics
STTH602C
Figure 5.
Relative variation of thermal
Figure 6.
impedance junction to case versus
pulse duration (TO-220FPAB)
Junction capacitance versus
reverse applied voltage (typical
values per diode)
Zth(j-c)/Rth(j-c)
1.0
Single pulse
TO-220FPAB
C(pF)
100
F=1MHz
Vosc=30mVRMS
Tj=25°C
0.1
10
0.0
1.E-03
1.E-02
tp(s)
1.E-01
1.E+00
1.E+01
VR(V)
1
1
10
100
1000
Figure 7. Reverse recovery charges versus
dIF/dt (typical values)
QRR(nC)
100
IF=3A
VR=160V
80
Tj=125°C
60
40
Tj=25°C
20
0
dIF/dt(A/µs)
0 50 100 150 200 250 300 350 400 450 500
Figure 8. Reverse recovery time versus dIF/dt
(typical values)
tRR(ns)
80
70
60
50
40
30
20
10
0
10
IF=3A
VR=160V
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
100
1000
Figure 9. Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
10
IF=3A
VR=160V
8
6
Tj=125°C
4
Tj=25°C
2
dIF/dt(A/µs)
0
0
50 100 150 200 250 300 350 400 450 500
Figure 10. Dynamic parameters versus
junction temperature
QRR; IRM [Tj] / QRR; IRM [Tj=125°C]
1.4
IF=3A
1.2
VR=160V
1.0
0.8
IRM
0.6
QRR
0.4
0.2
Tj(°C)
0.0
25
50
75
100
125
150
4/9
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