STTA506B Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STTA506B

TURBOSWITCH™ ULTRA-FAST HIGH VOLTAGE DIODE

STMicroelectronics 

STTA506D/F/B

APPLICATION DATA (Cont’d)

Fig. B : STATIC CHARACTERISTICS

I

IF

Rd

VR

V

IR VtO V F

Conduction losses :

P1 = Vt0 . IF(AV) + Rd . IF2(RMS)

Reverse losses :

P2 = VR . IR . (1 - δ)

Fig. C : TURN-OFF CHARACTERISTICS

V

IL

TRANSISTOR

I

t

I

dI F /dt

DIODE

V

ta tb

t

I RM

dIR /dt

VR

trr = ta + tb S = tb / ta

I

dIF /dt = VR /L

RECTIFIER

OPERATION

V

ta tb

IRM

dIR /dt

trr = ta + tb

S = tb/ta

t

VR

6/10

Turn-on losses :

(in the transistor, due to the diode)

P5 = VR

×

IRM 2 × ( 3 + 2 × S ) × F

6 x dIF ⁄ dt

+ VR

×

IRM × IL × ( S + 2 ) × F

2 x dIF ⁄ dt

Turn-off losses (in the diode) :

P3 = VR

× IRM 2 × S

6 x dIF ⁄ dt

×

F

P3 and P5 are suitable for power MOSFET and

IGBT

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