DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STTA506 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STTA506 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Fig. 1: Switching OFF losses versus dI/dt.
P3(W)
2.50
2.00
Tj=125°C
F = 10kHz
VR=600V
1.50
1.00
0.50
0.00
0
dIF/dt(A/µs)
50 100 150 200 250 300 350 400 450 500
STTA506D/F/B
Fig. 2: Forward voltage drop versus forward
current.
3.00 VFM(V)
2.75
MAXIMUM VALUES
2.50
2.25
2.00
1.75
Tj= 125 oC
1.50
1.25
1.00
0.75
0.50
0.25
IFM(A)
0.00
0.1
1
10
100
Fig. 3: Peak reverse recovery current versus
dIF/dt.
IRM(A)
25.0
22.5 90% CONFIDENCE Tj=125oC
20.0 VR=400V
17.5
IF=10A
15.0
12.5
I F= 5A
10.0
7.5
IF=2.5A
5.0
2.5
dIF/dt(A/ s)
0.0
0 100 200 300 400 500 600 700 800 900 1000
Fig. 4: Reverse recovery time versus dIF/dt.
trr(ns)
180
160
90% CONFIDENCE Tj=125oC
140
VR=400V
120
100
80
60
IF=5A
IF=10A
40 IF=2.5A
20
dIF/dt(A/ s)
0
0 100 200 300 400 500 600 700 800 900 1000
Fig. 5: Softness factor (tb/ta) versus dIF/dt.
Fig. 6: Relative variation of dynamic parameters
versus junction temperature (reference Tj = 125°C).
S factor
2.0
1.8
Typical values Tj=125 oC
1.6
I F <2xI F( av)
1.4
VR= 400V
1.2
1.0
0.8
0.6
0.4
0.2
dIF/dt(A/ s)
0.0
0 100 200 300 400 500 600 700 800 900 1000
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0
S factor
IRM
Tj(oC)
25 50 75 100 125 150
3/10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]