DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

STTA506 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STTA506 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
STTA506D/F/B
THERMAL AND POWER DATA
Symbol
Rth(j-c)
P1
Pmax
Parameter
Junction to case
Conduction power dissipation
IF(AV) = 5A δ =0.5
Total power dissipation
Pmax = P1 + P3 (P3 = 10% P1)
Test conditions
TO-220AC/ DPAK
ISOWATT220AC
TO-220AC/ DPAK Tc= 118°C
ISOWATT220AC Tc= 96°C
TO-220AC/ DPAK Tc= 115°C
ISOWATT220AC Tc= 90°C
Value
3.5
6.0
9
Unit
°C/W
W
10
W
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
VF * Forward voltage drop
IR ** Reverse leakage current
Vto
rd
Test pulse :
Threshold voltage
Dynamic resistance
* tp = 380 µs, δ < 2%
** tp = 5 ms, δ < 2%
Test conditions
IF =5A
Tj = 25°C
Tj = 125°C
VR =0.8 x Tj = 25°C
VRRM
Tj = 125°C
Ip < 3.IAV Tj = 125°C
Min Typ Max Unit
1.75 V
1.25 1.5 V
100 µA
0.75 2 mA
1.15 V
70 m
To evaluate the maximum conduction losses use the following equation :
P = Vto x IF(AV) + rd x IF2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
TURN-OFF SWITCHING
Symbol
Parameter
trr
Reverse recovery
time
IRM
Maximum reverse
recovery current
S factor Softness factor
Test conditions
Min Typ Max Unit
Tj = 25°C
IF = 0.5 A IR = 1A Irr = 0.25A
IF = 1 A dIF/dt =-50A/µs VR =30V
ns
20
50
Tj = 125°C VR = 400V IF =5A
dIF/dt = -40 A/µs
dIF/dt = -500 A/µs
A
3.0
11
Tj = 125°C VR = 400V IF =5A
-
dIF/dt = -500 A/µs
0.55
TURN-ON SWITCHING
Symbol
tfr
Parameter
Forward recovery
time
VFp
Peak forward
voltage
Test conditions
Tj = 25°C
IF =5 A, dIF/dt = 40 A/µs
measured at 1.1 × VFmax
Tj = 25°C
IF =5A, dIF/dt = 40 A/µs
Min Typ Max Unit
ns
500
V
10
2/10

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]