STTA2512 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STTA2512 Datasheet PDF : 9 Pages
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STTA2512P / STTA5012TV1/2
Fig. 1: Conduction losses versus average current
(per diode).
P1(W)
60
50
40
30
20
10
0
0
5
δ = 0.1
δ = 0.2
δ = 0.5
δ=1
T
IF(av) (A)
10
15
20
δ=tp/T
25
tp
30
Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).
IFM(A)
300
Tj=125°C
100
10
VFM(V)
1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Fig. 3-1: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOTOP).
Fig. 3-2: Relative variation of thermal impedance
junction to case versus pulse duration (SOD93).
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
Single pulse
0.0
1E-3
1E-2
tp(s)
1E-1
1E+0 5E+0
Zth(j-c)/Rth(j-c)
1.0
0.8
0.6
δ = 0.5
0.4
δ = 0.2
0.2 δ = 0.1
0.0
1E-4
Single pulse
1E-3
tp(s)
1E-2
1E-1
1E+0
Fig. 4: Peak reverse recovery current versus dIF/dt
(90% confidence, per diode).
Fig. 5: Reverse recovery time versus dIF/dt (90%
confidence, per diode).
IRM(A)
55
50
VR=600V
Tj=125°C
45
40
35
30
25
20
15
10
5
0
0
100
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
200
300
400
500
trr(ns)
500
450
400
350
300
250
200
150
100
50
0
0
IF=2*IF(av)
IF=IF(av)
IF=0.5*IF(av)
dIF/dt(A/µs)
100
200
300
VR=600V
Tj=125°C
400
500
3/9
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