STPS40120CTN Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS40120CTN Datasheet PDF : 9 Pages
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Characteristics
1
Characteristics
STPS40120C
Table 2. Absolute ratings (limiting values, per diode)
Symbol
Parameter
Value
Unit
VRRM Repetitive peak reverse voltage
120
V
IF(RMS) Forward rms current
30
A
IF(AV)
Average forward δ = 0.5
current
Tc = 145 °C
Per diode
Per device
20
A
40
IFSM Surge non repetitive forward current tp = 10 ms sinusoidal
200
A
PARM Repetitive peak avalanche power
tp = 1 µs, Tj = 25 °C
10500
W
Tstg Storage temperature range
Tj
Maximum operating junction temperature(1)
1.
d----P-----t--o----t
dTj
<
R-----t--h----(-1--j--–-----a----)
condition
to
avoid
runaway
for
a
diode
on
its
own
heatsink
-65 to + 175 °C
175
°C
Table 3. Thermal parameters
Symbol
Parameter
Value
Unit
Rth(j-c)
Rth(c)
Junction to case
Coupling
Per diode
Total
Total
1.6
°C/W
0.85
0.1
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c)
Table 4. Static electrical characteristics (per diode)
Symbol
Test conditions
Min. Typ. Max. Unit
IR(1) Reverse leakage current Tj = 25 °C VR = VRRM
Tj = 125 °C
25
μA
4
12
mA
Tj = 25 °C
IF = 7.5 A
Tj = 125 °C
0.73
0.57 0.61
VF(2) Forward voltage drop
Tj = 25 °C
IF = 20 A
Tj = 125 °C
0.9
V
0.69 0.73
Tj = 25 °C IF = 40 A
Tj = 125 °C
1
0.83 0.88
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the maximum conduction losses use the following equation:
P = 0.58 x IF(AV) + 0.0075 IF2(RMS)
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Doc ID 11214 Rev 3
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