STPS5L25 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS5L25 Datasheet PDF : 8 Pages
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Characteristics
1
Characteristics
STPS5L25
Table 2. Absolute ratings (limiting values, at 25 °C unless otherwise stated)
Symbol
Parameter
Value Unit
VRRM Repetitive peak reverse voltage
25
V
IF(RMS) Forward rms current
7
A
IF(AV) Average forward current, δ 0.5 square wave Tc = 140 °C,
5
A
IFSM Surge non repetitive forward current
tp = 10 ms sinusoidal
75
A
PARM Repetitive peak avalanche power
tp = 10 s, Tj = 125 °C
215
W
Tstg Storage temperature range
-65 to +150 °C
Tj
Maximum operating junction temperature(1)
150
°C
1. dPtot < 1 condition to avoid thermal runaway for a diode on its own heatsink
dTj Rth(j-a)
Symbol
Rth(j-c)
Table 3. Thermal resistance
Parameter
Max. value
Junction to case
2.5
Unit
°C/W
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
IR(1)
Tj = 25 °C
Reverse leakage current
VR = VRRM
-
-
350
A
Tj = 125 °C
-
55
115
mA
Tj = 25 °C
-
-
0.47
IF = 5 A
VF(1) Forward voltage drop
Tj = 125 °C
-
0.31 0.35
V
Tj = 25 °C
IF = 10 A
-
-
0.59
Tj = 125 °C
-
0.41 0.50
1. Pulse test: tp = 380 µs, < 2%
To evaluate the conduction losses use the following equation:
P = 0.2 x IF(AV) + 0.03 x IF2(RMS)
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