STPS4045CW Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS4045CW Datasheet PDF : 8 Pages
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STPS4045C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min. Typ. Max. Unit
IR (1) Reverse leakage current
VF (1) Forward voltage drop
1. Pulse test : tp = 380 µs, δ < 2%
Tj = 25 °C
-
VR = VRRM
Tj = 125 °C
-
-
200
µA
11
40
mA
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
IF = 20 A
IF = 40 A
-
-
0.76
-
0.56 0.63
V
-
-
0.94
-
0.7 0.83
To evaluate the conduction losses use the following equation :
P = 0.43x IF(AV) + 0.01x IF2(RMS)
Figure 1.
Average forward power dissipation Figure 2.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5 per diode)
18 PF(av)(W)
16
δ=0.2
14
δ=0.1
12
δ=0.05
δ=0.5
δ=1
10
8
6
4
T
2
IF(av) (A)
δ=tp/T
tp
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
24 IF(av)(A)
22
20
18
16
14
12
10
8
6
T
4
2
δ=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
TO -247
TO-220AB
Tamb(°C)
75
100
125
150
175
Figure 3. Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1 µs)
1
Figure 4.
Normalized avalanche power
derating versus junction
temperature
PARM(Tj)
PARM(25 °C)
1.2
1
0.1
0.8
0.6
0.01
0.4
0.001
tp(µs)
0.2
Tj(°C)
0
0.01
0.1
1
10
100
1000
25
50
75
100
125
150
Doc ID 4605 Rev 5
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