STPS20S100CT Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STPS20S100CT Datasheet PDF : 7 Pages
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STPS20S100C
Figure 1: Average forward power dissipation
versus average forward current (per diode)
PF(AV)(W)
10
9
8
7
6
5
4
3
2
1
0
012
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
δ=1
T
IF(AV)(A)
δ=tp/T
tp
3 4 5 6 7 8 9 10 11 12 13
Figure 2: Average forward current versus
ambient temperature (δ = 0.5, per diode)
IF(AV)(A)
11
10
9
8
7
6
5
4
3
T
2
1
0
δ=tp/T
0
25
tp
50
Rth(j-a)=Rth(j-c)
I²PAK/TO-220AB
TO-220FPAB
Rth(j-a)=15°C/W
Tamb(°C)
75
100
125
150
175
Figure 3: Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
100
1000
Figure 4: Normalized avalanche power
derating versus junction temperature
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
0
Tj(°C)
25
50
75
100
125
150
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode)
IM(A)
180
160
140
120
100
80
60
40
IM
20
0
1.E-03
t
δ=0.5
t(s)
1.E-02
1.E-01
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values, per diode) (TO-220FPAB)
IM(A)
120
110
100
90
80
70
60
50
40
30
IM
20
10
0
1.E-03
t
δ=0.5
1.E-02
t(s)
1.E-01
Ta=25°C
Ta=75°C
Ta=125°C
1.E+00
3/7
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