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STPS2045CF Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
STPS2045CF
ST-Microelectronics
STMicroelectronics ST-Microelectronics
STPS2045CF Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
STPS2045CT/CF/CG/CFP/CR
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
Fig. 2: Average current versus ambient
temperature (δ=0.5, per diode).
PF(av)(W)
8
δ = 0.1 δ = 0.2
7
δ = 0.05
6
5
4
3
2
1
IF(av) (A)
0
01234567
δ = 0.5
δ=1
T
δ=tp/T
tp
8 9 10 11 12
IF(av)(A)
12
10
8
6
4
T
2
δ=tp/T
0
0
25
tp
50
Rth(j-a)=Rth(j-c)
ISOWATT220AB
TO-220FPAB
Rth(j-a)=15°C/W
TO-220AB
D²PAK
Tamb(°C)
75 100 125 150 175
Fig. 3: Normalized avalanche power derating
versus pulse duration.
Fig. 4: Normalized avalanche power derating
versus junction temperature.
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1
10
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
0
Tj(°C)
25
50
75
100
125
150
Fig. 5-1: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (TO-220AB, D2PAK and I²PAK).
Fig. 5-2: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode) (ISOWATT220AB, TO-220FPAB).
IM(A)
140
120
100
80
60
40
IM
20
0
1E-3
t
δ=0.5
t(s)
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
IM(A)
100
80
60
40
IM
20
t
δ=0.5
t(s)
0
1E-3
1E-2
1E-1
Tc=75°C
Tc=100°C
Tc=125°C
1E+0
3/8

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