STD8NM50N(2018) Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STD8NM50N
(Rev.:2018)
(Rev.:2018)
STMicroelectronics
STD8NM50N Datasheet PDF : 21 Pages
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Figure 7. Static drain-source on-resistance
RDS (on)
(Ω)
0.77
0.76
0.75
0.74
VG S =1 0 V
AM07919v1
0.73
0.72
0.71
0.70
0.69
0.68
0
1
2
3
4
5 ID(A)
Figure 9. Capacitance variations
C
(pF)
AM07921v1
1000
Cis s
100
Coss
10
Crs s
1
0
1
10
100 VDS(V)
Figure 11. Normalized gate threshold voltage vs
temperature
VGS (th)
(norm)
AM07923v1
ID = 250 µA
1.00
0.90
0.80
0.70
-50 -25 0 25 50 75 100 TJ(°C)
STD8NM50N, STP8NM50N
Electrical characteristics (curves)
Figure 8. Gate charge vs gate-source voltage
VGS
(V)
12
10 VDS
8
VDD=400 V
ID=5 A
AM07920v1
VDS (V)
400
350
300
250
6
200
150
4
100
2
50
0
0
0
5
10
15
Qg(nC)
Figure 10. Output capacitance stored energy
E
AM07922v1
(μJ)
2
1
0
0 100 200 300 400 500 VDS(V)
Figure 12. Normalized on-resistance vs temperature
RDS (on)
(norm)
2.1
ID = 2.5 A
AM07924v1
1.7
1.3
0.9
0.5
-50 -25 0 25 50 75 100 TJ(°C)
DS6808 - Rev 7
page 6/21
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