STP40NF20 Ver la hoja de datos (PDF) - STMicroelectronics
Número de pieza
componentes Descripción
Fabricante
STP40NF20
STMicroelectronics
STP40NF20 Datasheet PDF : 17 Pages
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STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID(1)
ID(1)
IDM(2)
Ptot
dv/dt (3)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
Peak diode recovery voltage slope
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1s; Tc = 25°C)
Tstg
Storage temperature
Tj
Max. operating junction temperature
1. Value limited by wire bonding
2. Pulse width limited by safe operating area.
3. ISD ≤40A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Value
TO-220
D2PAK
TO-247
TO-220FP
200
± 20
40
25
160
160
40
1.28
0.32
12
Unit
V
V
A
A
A
W
W/°C
V/ns
--
2500
V
-55 to 150
°C
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering
purpose(1)
1. for 10 sec. 1.6mm from case
TO-220
D2PAK TO-247 TO-220FP Unit
0.78
62.5
50
3.1
°C/W
62.5 °C/W
300
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max value
40
230
Unit
A
mJ
3/17
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