F40NF03L Ver la hoja de datos (PDF) - STMicroelectronics
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F40NF03L Datasheet PDF : 14 Pages
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Electrical characteristics
2
Electrical characteristics
STF40NF03L, STP40NF03L
(TCASE=25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Drain-source
V(BR)DSS breakdown voltage
IDSS
Zero gate voltage
drain current (VGS = 0)
IGSS
VGS(th)
RDS(on)
Gate-body leakage
current (VDS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
ID = 250 µA, VGS =0
30
VDS = max ratings
VDS = max ratings,
TC = 125 °C
VGS = ±16 V
VDS = VGS, ID = 250 µA
1
VGS = 10 V, ID = 20 A
VGS = 4.5 V, ID = 20 A
V
1
µA
10
µA
±100 nA
1.7
2.5
V
0.018 0.022 Ω
0.028 0.035 Ω
Table 5.
Symbol
Dynamic
Parameter
Test conditions
gfs (1)
Forward
transconductance
VDS = 10 V, ID = 20 A
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 15 V, ID = 20 A
RG = 4.7 Ω VGS = 4.5 V
(see Figure 16)
Qg
Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 15 V, ID = 40 A,
VGS = 4.5 V
(see Figure 17)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min.
-
-
-
-
Typ.
20
770
255
60
14
80
25
16
10.5
4
4.5
Max.
-
-
-
15
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
4/14
Doc ID 6794 Rev 8
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