STB200NF04L Ver la hoja de datos (PDF) - STMicroelectronics
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Fabricante
STB200NF04L
STMicroelectronics
STB200NF04L Datasheet PDF : 12 Pages
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STP200NF04L - STB200NF04L - STB200NF04L-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VGDR
Drain-gate Voltage (RGS=20 KΩ)
VGS
Gate- source Voltage
ID (**) Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM (2) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
dv/dt (1) Peak Diode Recovery voltage slope
EAS (3) Single Pulse Avalanche Energy
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
(1)ISD ≤ 100 A, di/dt ≤ 240 A/µs, VDD ≤ 32 , Tj ≤ TJMAX
(2) Pulse width limited by safe operating area.
(3) Starting Tj = 25°C, IAR = 50A, VDD = 30V
(**) Current limited by Package
Value
40
40
± 16
120
120
480
300
2
3.6
1.4
-55 to 175
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case
Max
Rthj-pcb (*) Thermal Resistance Junction-pcb
Max
Rthja Thermal Resistance Junction-ambient
Max
Tl
Maximum Lead Temperature For Soldering Purpose
(*)When mounted on 1 inch² FR4 2oZ Cu
TO-220/I²PAK
0.50
62.5
300
D²PAK
35
--
--
ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)
Table 5: On/Off
Symbol
Parameter
Test Conditions
Min. Typ. Max.
V(BR)DSS Drain-source
ID = 250 µA, VGS = 0
40
Breakdown Voltage
IDSS
Zero Gate Voltage
VDS= Max Rating
1
Drain Current (VGS = 0) VD = Max Rating, TC= 125 °C
10
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V
±100
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA
1
4
RDS(on)
Static Drain-source On VGS = 10 V, ID = 50 A
Resistance
VGS = 5 V, ID = 50 A
TO-220
I²PAK
3.3
3.8
3.8
4.6
VGS = 10 V, ID = 50 A
VGS = 5 V, ID = 50 A
D²PAK
3.0
3.5
3.5
4.3
Unit
V
V
V
A
A
A
W
W/°C
V/ns
J
°C
Unit
°C/W
°C/W
°C
Unit
V
µA
µA
nA
V
mΩ
mΩ
mΩ
mΩ
2/12
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