STGP3NB60 Ver la hoja de datos (PDF) - STMicroelectronics
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STGP3NB60 Datasheet PDF : 8 Pages
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STGP3NB60H
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Max
Max
Typ
1.78
62.5
0. 5
oC/W
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified)
OFF
Symbo l
P ar am et e r
VBR(CES) Collector-Emitt er
Breakdown Voltage
ICES
IGES
Collector cut-off
(VGE = 0)
Gate-Emitter Leakage
Current (VCE = 0)
Test Conditions
IC = 250 µA VGE = 0
VCE = Max Rat ing
VCE = Max Rat ing
VGE = ± 20 V
Tj = 25 oC
Tj = 125 oC
VCE = 0
Min.
600
Typ. Max.
10
100
± 100
Unit
V
µA
µA
nA
ON (∗)
Symbo l
VGE(th)
VCE(SAT )
P ar am et e r
Gate Threshold
V ol ta ge
Collector-Emitt er
Saturation Voltage
Test Conditions
VCE = VGE IC = 250 µA
Min.
3
Typ.
Max.
5
Unit
V
VGE = 15 V IC = 3 A
VGE = 15 V IC = 3 A
Tj = 125 oC
2.4
2.8
V
1.9
V
DYNAMIC
Symbo l
gf s
Cies
Co es
Cres
QG
QGE
QGC
ICL
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Latching Current
Test Conditions
VCE =25 V
IC = 3 A
VCE = 25 V f = 1 MHz VGE = 0
VCE = 480 V IC = 3 A VGE = 15 V
Vclamp = 480 V RG=10Ω
Tj = 150 oC
Min.
1.3
160
23
4.5
12
Typ.
2.4
235
33
6.6
21
6
7.6
Max.
300
43
8.6
27
Unit
S
pF
pF
pF
nC
nC
nC
A
SWITCHING ON
Symbo l
td(on)
tr
( di / dt ) o n
Eo n(r)
Parameter
Delay Time
Rise Time
Turn-on Current Slope
Turn-on Switching
Losses
Test Conditions
VCC = 480 V
VGE= 15 V
IC = 3 A
RG = 10Ω
VCC = 480 V
RG = 10 Ω
Tj = 125 oC
IC = 3 A
VGE = 15 V
Min.
T yp.
16
30
400
37
M ax .
Unit
ns
ns
A/µ s
µJ
2/8
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