STG3157CTR Ver la hoja de datos (PDF) - STMicroelectronics

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componentes Descripción

Fabricante

STG3157CTR

Low voltage low on-resistance SPDT switch with break-before-make feature

STMicroelectronics 

STG3157

DC Electrical characteristics

Test conditions

Symbol Parameter

VCC (V)

ΔRON

RFLAT

IOFF

IIN

ICC

VS = 3.15 V

4.5

IS = 30 mA

On-

VS = 2.1 V

3.0

resistance

IS = 24 mA

match

between

VS = 1.6 V

channels

2.3

IS = 8 mA

1.65

VS= 1.15 V

IS = 4 mA

VS = 0 V to

5.0

VCC

IS = 30 mA

VS = 0 V to

3.3

VCC

On-

IS = 24 mA

resistance

flatness

VS = 0 V to

2.5

VCC

IS = 8 mA

VS = 0 V to

1.8

VCC

IS = 4 mA

OFF state

leakage 1.65 -195

current

VS = 0 to

VCC

Input

leakage

current

0 - 5.5

VIN = 0 to

5.5 V

Quiescent

supply 1.65 - 4.3

current

VIN = VCC

or GND

TA = 25 °C

Min. Typ. Max.

0.10

0.10

0.20

0.35

3

6

14

80

±0.05 ±0.1

±0.05 ±0.1

1

Value

-40 to 85 °C

Min.

Max.

±1

±1

1

-55 to125 °C Unit

Min.

Max.

Ω

Ω

± 10 µA

± 10 µA

10

µA

DS2882 - Rev 3

page 6/20

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