STD90N4F3 Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STD90N4F3

N-channel 40 V, 5.0 mΩ, 80 A, DPAK, TO-220, IPAK, I2PAK STripFET™ III Power MOSFET

STMicroelectronics 

Electrical characteristics

STD90N4F3, STI90N4F3, STP90N4F3, STU90N4F3

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

Symbol

Static

Parameter

V(BR)DSS

Drain-source breakdown

voltage

IDSS

IGSS

VGS(th)

Zero gate voltage drain

current (VGS = 0)

Gate body leakage current

(VDS = 0)

Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 250 µA, VGS= 0

40

VDS = Max rating,

VDS = Max rating,Tc = 125°C

V

10 µA

100 µA

VGS = ±20 V

±200 nA

VDS= VGS, ID = 250 µA

2

VGS= 10 V, ID= 40 A for DPAK

VGS= 10 V, ID= 40 A for IPAK,

I²PAK, TO-220

4V

5.0 5.8 mΩ

5.4 6.2 mΩ

Table 5. Dynamic

Symbol

Parameter

Test conditions

gfs (1) Forward transconductance

VDS =25 V, ID=40 A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer capacitance

VDS =25 V, f=1 MHz, VGS=0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=20 V, ID = 80 A

VGS =10 V

(see Figure 14)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min Typ. Max. Unit

- 100

S

2200

pF

- 580

pF

40

pF

40 54 nC

- 11

nC

8

nC

4/16

Doc ID 14212 Rev 3

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