Philips Semiconductors
AM PIN diode
Product specification
BAQ806
handbook, full pagewidth
10 µF
DUT
10
IF
(mA)
pulse
f = 1 kHz
10 mA
10 Ω
τ
0
10%
IR
(mA)
90%
6
Input impedance oscilloscope: 1 MΩ, 22 pF; tr ≤ 7 ns.
Source impedance: 50 Ω; tr ≤ 15 ns.
Fig.13 Charge carrier life time test circuit and definition.
t
MGG506
handbook, halfpage 50 Ω
R1 1 µF IF R2
DUT
100
kHz
50 Ω Vin Vout
11 V
MGG507
IF (mA) R1 (Ω)
0.1 3000
1
300
10
30
R2 (kΩ)
100
10
1
50
4.5
50
2.5
1.25
MSB213
Fig.14 Diode forward resistance test circuit.
1998 Aug 03
Dimensions in mm.
Fig.15 Printed-circuit board for surface mounting.
7