BAQ806 Ver la hoja de datos (PDF) - Philips Electronics
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BAQ806 Datasheet PDF : 12 Pages
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Philips Semiconductors
AM PIN diode
Product specification
BAQ806
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VF
forward voltage
IF = 100 mA; see Figs 2 and 3
IF = 100 mA; Tj = Tj max;
see Figs 2 and 3
IR
reverse current
VR = 100 V; see Fig. 4
VR = 100 V; Tj = 125 °C; see Fig. 4
τ
charge carrier life time when switched from IF = 10 mA to
IR = 6 mA; measured at 10% of IR;
see Fig. 13
Cd
diode capacitance
f = 1 MHz; see Figs 5, 6, 7 and 8
VR = 0 V
VR = 2 V
rD
diode forward resistance f = 100 kHz; see Figs 9 and 14
IF = 10 µA
IF = 100 µA
IF = 1 mA
IF = 10 mA
rs
diode series resistance f = 100 kHz; see Figs 10, 11 and 12
VR = 0 V
VR = 2 V
f = 1 MHz; see Figs 10, 11 and 12
VR = 0 V
VR = 2 V
MIN.
−
−
−
−
15
TYP.
0.9
0.7
−
−
25
−
9
−
5
−
3300
−
560
−
62
−
7
1000 2100
5000 12000
25
50
100
250
MAX.
1.1
0.9
UNIT
V
V
0.1 µA
30 µA
− µs
11 pF
6 pF
6000 Ω
900 Ω
90 Ω
10 Ω
− kΩ
− kΩ
− kΩ
− kΩ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
CONDITIONS
note 1
note 2
VALUE
25
100
150
UNIT
K/W
K/W
K/W
Note
1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper ≥35 µm, see Fig. 15
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper ≥40 µm, see Fig. 15.
For more information please refer to the ‘General Part of Handbook SC10’
1998 Aug 03
3
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