STP3NK60Z(2018) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STP3NK60Z
(Rev.:2018)

N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages

STMicroelectronics 

STB3NK60ZT4,STD3NK60Z-1,STD3NK60ZT4,STP3NK60Z,STP3NK60ZFP

Test circuits

3

Test circuits

Figure 15. Test circuit for resistive load switching times

VGS

pulse width

VD

RG

RL

2200

3.3

+ μF

μF

VDD

D.U.T.

AM01468v1

Figure 17. Test circuit for inductive load switching and

diode recovery times

Figure 16. Test circuit for gate charge behavior

VGS

pulse width

+

2200

μF

1 kΩ

12 V

47 kΩ

100 nF

VDD

1 kΩ

IG= CONST

2.7 kΩ

47 kΩ

100 Ω

D.U.T.

VG

AM01469v1

Figure 18. Unclamped inductive load test circuit

A

D

AA

G

D.U.T.

fast

diode

100 µH

S

B

25 Ω

BB

D

3.3

µF

1000

+ µF

VDD

G

D.U.T.

+ RG

S

_

AM01470v1

Figure 19. Unclamped inductive waveform

V(BR)DSS

VD

VDD

IDM

ID

VDD

AM01472v1

L

VD

2200

+ µF

3.3

µF

VDD

ID

Vi

pulse width

D.U.T.

AM01471v1

Figure 20. Switching time waveform

ton

td(on)

tr

toff

td(off)

tf

90%

90%

0

10%

VDS

10%

VGS

90%

0

10%

AM01473v1

DS2912 - Rev 6

page 8/34

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