STB9NB60 Ver la hoja de datos (PDF) - STMicroelectronics
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STB9NB60 Datasheet PDF : 9 Pages
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STB9NB60
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg
Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 300 V ID = 4.5 A
RG = 4.7 Ω
VGS = 10 V
(see test circuit, figure 3)
VDD = 480 V ID =9 A VGS = 10 V
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 480 V ID =9 A
RG = 4.7 Ω VGS = 10 V
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM (•)
Source-drain Current
Source-drain Current
( pu ls ed)
VSD (∗) Forward On Voltage
ISD = 9 A VGS = 0
trr
Reverse Recovery
Time
Qrr
Reverse Recovery
Charge
ISD = 9 A di/dt = 100 A/µs
VDD = 100 V Tj = 150 oC
I R RM
Reverse Recovery
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Min.
Typ.
25
11
Max.
35
15
Unit
ns
ns
40
56
nC
10.5
nC
17.5
nC
Min.
Typ.
12
10
21
Max.
17
14
29
Unit
ns
ns
ns
Min.
Typ.
Max.
9
36
Unit
A
A
1.6
V
600
ns
5.4
µC
18
A
Safe Operating Area
Thermal Impedance
3/8
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