STB70NF3LLT4(2006) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STB70NF3LLT4
(Rev.:2006)

N-channel 30V - 0.0075Ω - 70A - D2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

STB70NF3LL

Electrical characteristics

Table 5. Switching times

Symbol

Parameter

td(on)

tr

Turn-on delay time

Rise time

Qg

Qgs

Qgd

td(off)

tf

Total gate charge

Gate-source charge

Gate-drain charge

Turn-off delay time

Fall time

Test conditions

Min Typ Max Unit

VDD = 15V ID = 35A

RG = 4.7Ω VGS = 4.5V

(Resistive Load Figure 16)

VDD= 15V ID= 70A

VGS= 4.5V

VDD = 15 V

ID = 35 A

RG = 4.7Ω, VGS = 4.5 V

(Resistive Load Figure 16)

23

ns

165

ns

24

33

nC

8.5

nC

12

nC

27

ns

28

ns

Table 6. Source drain diode

Symbol

Parameter

Test conditions

Min Typ Max Unit

ISD

ISDM(1)

Source-drain current

Source-drain current

(pulsed)

VSD (2) Forward on voltage

ISD = 70 A

VGS = 0

trr

Qrr

IRRM

Reverse recovery time ISD = 70 A di/dt = 100A/µs

Reverse recovery charge VDD = 20 V TJ = 150°C

Reverse recovery current (see test circuit Figure 14)

1. Pulse width limited by safe operating area.

2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

70

A

280 A

1.3

V

42

ns

52

nC

2.5

A

5/13

Share Link: