STB70NF3LLT4(2006) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza

componentes Descripción

Fabricante

STB70NF3LLT4
(Rev.:2006)

N-channel 30V - 0.0075Ω - 70A - D2PAK Low gate charge STripFET™ II Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STB70NF3LL

(TCASE=25°C unless otherwise specified)

Table 3. On/off states

Symbol

Parameter

Test conditions

Min Typ Max Unit

Drain-source

V(BR)DSS Breakdown voltage

ID = 250 µA, VGS = 0

30

V

IDSS

Zero gate voltage

Drain current (VGS = 0)

VDS = Max rating

VDS = Max rating

TC = 125°C

1

µA

10 µA

IGSS

Gate-body leakage

Current (VDS = 0)

VGS = ± 16 V

±100 nA

VGS(th) Gate threshold voltage VDS = VGS

ID = 250µA 1

V

RDS(on)

Static drain-source on

resistance

VGS = 10V

VGS = 4.5V

ID = 35A

ID = 18A

0.0075 0.0095 Ω

0.010 0.012 Ω

Table 4.

Symbol

Dynamic

Parameter

gfs

Ciss

Coss

Crss

Forward

Transconductance

Input capacitance

Output capacitance

Reverse transfer

capacitance

Test conditions

Min Typ Max Unit

VDS = 15V

ID = 35A

25

S

1650

pF

VDS = 25V f = 1MHz VGS = 0

540

pF

130

pF

4/13

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