DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

ST2052BDR(2005) Ver la hoja de datos (PDF) - STMicroelectronics

Número de pieza
componentes Descripción
Fabricante
ST2052BDR
(Rev.:2005)
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ST2052BDR Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
ST2052
Table 6: Enable Input ENx Characteristics (VI = 5.5V, IO = rated current, VIEN =VI, TJ = 25°C, unless
otherwise specified.) (See Note 1)
Symbol
Parameter
VIH High level Input Voltage
VIL Low level Input Voltage
II Input Current
ton Turn-on Time
toff Turn-off Time
Test Conditions
VI =2.7V to 5.5V
VI =4.5V to 5.5V
VI =2.7V to 4.5V
VIENX = VI or 0V
RL=10CL=100µF
RL=10CL=100µF
Min. Typ. Max. Unit
2
V
0.8
V
0.4
-0.5
0.5
µA
20
ms
40
ms
Table 7: Current Limit Characteristics (VI = 5.5V, IO = rated current, VIEN =VI, TJ = 25°C, unless other-
wise specified.) (See Note 1)
Symbol
Parameter
Test Conditions
IOS Short Circuit Output Current VI =5V, OUT connected to GND, device
enabled into short circuit
Min. Typ. Max. Unit
0.7
1
1.3
A
Table 8: Supply Current Characteristics (VI = 5.5V, IO = rated current, VIEN =VI, TJ = 25°C, unless oth-
erwise specified.) (See Note 1)
Symbol
Parameter
ISOL Current Low Level Output
ISOH Current Low High Output
IL Output Leakage Current
Test Conditions
VIENX = 0, No Load,
VIENX = 0, No Load, TJ=-40 to 125°C
VIENX = VI, No Load,
VIENX = VI, No Load, TJ=-40 to 125°C
VIENX = 0, Output Connected to GND,
TJ=-40 to 125°C
Min. Typ. Max. Unit
0.025 1
µA
10
70
90
µA
100
10
µA
Table 9: Undervoltage Characteristics (VI = 5.5V, IO = rated current, VIEN =VI, TJ = 25°C, unless other-
wise specified.) (See Note 1)
Symbol
Parameter
VIL Low Level Input Voltage
VHYS Hysteresys
Test Conditions
Min. Typ. Max. Unit
2
2.5
V
100
mV
Table 10: Overcurrent (OC) Characteristics (VI = 5.5V, IO = rated current, VIEN =VI, TJ = 25°C, unless
otherwise specified.) (See Note 1)
Symbol
Parameter
ISINK
VO
IOFF
TFB
Sink Current
Output Low Voltage
OFF-State Current
Fault-Blanking period
Test Conditions
VO =5V
IO =5mA
VO =5V VO =3.3V
VI =5.5V, TJ=25°C (See Note 2 and 3)
Min. Typ. Max. Unit
10
mA
0.5
V
1
µA
2
10
ms
Note 1: Pulse testing techniques maintain junction temperature close to ambient temperature: thermal effect must be takes into account sep-
arately.
Note 2: Specified by design, not production tested.
Note 3: Guaranteed by design.
4/9

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]