SSTA13T116(RevB) Ver la hoja de datos (PDF) - ROHM Semiconductor
Número de pieza
componentes Descripción
Fabricante
SSTA13T116 Datasheet PDF : 3 Pages
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NPN small signal transistor
SSTA13
Features
(1) High Current Gain.
Packaging specifications
Type
SSTA13
Package
Code
Basic ordering unit (pieces)
Taping
T116
3000
Dimensions (Unit : mm)
SSTA13
(1)Emitter
(2)Base
(3)Collector
2.9
0.4
(3)
0.95
0.45
(2)
(1)
0.95 0.95
1.9
0.15
Each lead has same dimensions
Abbreviated symbol : R1M
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
30
V
VCES
30
V
VEBO
10
V
IC
0.3
A
PC
0.2
W
Tj
150
°C
Tstg
−55 to 125
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Collector-emitter breakdown voltage BVCES 30
Collector-emitter breakdown voltage BVCEO 30
Emitter-base breakdown voltage
BVEBO 10
Collector-base cutoff current
ICBO
−
Emitter-base cutoff current
IEBO
−
Collector-emitter saturation voltage VCE(sat) −
Base-emitter voltage
VBE(on)
−
DC current transfer ratio
5000
hFE
10000
Transition frequency
fT
125
Collector output capacitance
∗ Pulsed
Cob
−
Typ.
−
−
−
−
−
−
−
−
−
−
5.4
Max.
−
−
−
0.1
0.1
1.5
2.0
−
−
−
−
Unit
V
V
V
μA
μA
V
V
−
MHz
pF
Conditions
IC= 100μA
IC= 10μA
IE= 10μA
VCB= 30V
VEB= 10V
IC/IB= 100mA/ 0.1mA
VCE= 5V, IC= 100mA ∗
VCE= 5V, IC= 10mA
VCE= 5V, IC= 100mA ∗
VCE= 5V, IE= 10mA, f=100MHz
VCB= 10V, f=100kHz, IE=0
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2011.09 - Rev.B
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