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SST29SF020-55-4C-NHE Ver la hoja de datos (PDF) - Silicon Storage Technology

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componentes Descripción
Fabricante
SST29SF020-55-4C-NHE
SST
Silicon Storage Technology SST
SST29SF020-55-4C-NHE Datasheet PDF : 25 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
2 Mbit / 4 Mbit Small-Sector Flash
SST29SF020 / SST29SF040
SST29VF020 / SST29VF040
Data Sheet
TABLE 6: DC Operating Characteristics VDD = 2.7-3.6V for SST29VF020/040
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
ISB
ILI
ILO
VIL
VIH
VIHC
VOL
VOH
Power Supply Current
Read
Write
Standby VDD Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
25
30
15
1
10
0.8
0.7VDD
VDD-0.3
0.2
VDD-0.2
Address input=VIL/VIH, at f=1/TRC Min
VDD=VDD Max
mA CE#=OE#=VIL, WE#=VIH, all I/Os open
mA CE#=WE#=VIL, OE#=VIH
µA CE#=VIHC, VDD=VDD Max
µA VIN=GND to VDD, VDD=VDD Max
µA VOUT=GND to VDD, VDD=VDD Max
V VDD=VDD Min
V VDD=VDD Max
V VDD=VDD Max
V IOL=100 µA, VDD=VDD Min
V IOH=-100 µA, VDD=VDD Min
T6.9 1160
TABLE 7: Recommended System Power-up Timings
Symbol
Parameter
Minimum
Units
TPU-READ1
Power-up to Read Operation
100
µs
TPU-WRITE1
Power-up to Program/Erase Operation
100
µs
T7.1 1160
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: Capacitance (TA = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
CIN1
I/O Pin Capacitance
Input Capacitance
VI/O = 0V
VIN = 0V
12 pF
6 pF
T8.1 1160
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 9: Reliability Characteristics
Symbol
Parameter
Minimum Specification Units Test Method
NEND1
Endurance
10,000
Cycles JEDEC Standard A117
TDR1
ILTH1
Data Retention
Latch Up
100
100 + IDD
Years JEDEC Standard A103
mA JEDEC Standard 78
T9.2 1160
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2005 Silicon Storage Technology, Inc.
9
S71160-13-000
10/06

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