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SST29EE010-70-4C-NH Ver la hoja de datos (PDF) - Silicon Storage Technology

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SST29EE010-70-4C-NH
SST
Silicon Storage Technology SST
SST29EE010-70-4C-NH Datasheet PDF : 26 Pages
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AC CHARACTERISTICS
1 Mbit Page-Mode EEPROM
SST29EE010 / SST29LE010 / SST29VE010
Data Sheet
TABLE 10: READ CYCLE TIMING PARAMETERS FOR SST29EE010
SST29EE010-70
SST29EE010-90
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
70
90
ns
TCE
Chip Enable Access Time
70
90
ns
TAA
Address Access Time
70
90
ns
TOE
Output Enable Access Time
30
40
ns
TCLZ1
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
20
30
ns
TOHZ1
OE# High to High-Z Output
20
30
ns
TOH1
Output Hold from Address Change
0
0
ns
T10.2 304
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 11: READ CYCLE TIMING PARAMETERS FOR SST29LE010
SST29LE010-150
SST29LE010-200
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
150
200
ns
TCE
Chip Enable Access Time
150
200
ns
TAA
Address Access Time
150
200
ns
TOE
Output Enable Access Time
60
100
ns
TCLZ1
CE# Low to Active Output
0
0
ns
TOLZ1
OE# Low to Active Output
0
0
ns
TCHZ1
CE# High to High-Z Output
30
50
ns
TOHZ1
OE# High to High-Z Output
30
50
ns
TOH1
Output Hold from Address Change
0
0
ns
T11.1 304
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 12: READ CYCLE TIMING PARAMETERS FOR SST29VE010
SST29VE010-200
SST29VE010-250
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
200
250
ns
TCE
Chip Enable Access Time
200
250
ns
TAA
Address Access Time
200
250
ns
TOE
TCLZ1
TOLZ1
TCHZ1
TOHZ1
TOH1
Output Enable Access Time
CE# Low to Active Output
OE# Low to Active Output
CE# High to High-Z Output
OE# High to High-Z Output
Output Hold from Address Change
100
120
ns
0
0
ns
0
0
ns
50
50
ns
50
50
ns
0
0
ns
T12.1 304
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
10
S71061-07-000 6/01 304

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