SST29EE010-150-4C-W Ver la hoja de datos (PDF) - Silicon Storage Technology
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SST29EE010-150-4C-W Datasheet PDF : 27 Pages
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1 Megabit Page Mode EEPROM
SST29EE010, SST29LE010, SST29VE010
TABLE 7: POWER-UP TIMINGS
Symbol
Parameter
TPU-READ(1)
TPU-WRITE(1)
Power-up to Read Operation
Power-up to Write Operation
Maximum
100
5
Units
µs
1
ms
304 PGM T7.0
2
TABLE 8: CAPACITANCE (Ta = 25 °C, f=1 MHz, other pins open)
Parameter
Description
Test Condition
Maximum
3
CI/O(1)
I/O Pin Capacitance
VI/O = 0V
12 pF
CIN(1)
Input Capacitance
VIN = 0V
6 pF
304 PGM T8.0
4
Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
5
TABLE 9: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Minimum Specification
Units Test Method
6
NEND
TDR(1)
VZAP_HBM(1)
Endurance
Data Retention
ESD Susceptibility
Human Body Model
10,000(2)
100
1000
Cycles MIL-STD-883, Method 1033
Years JEDEC Standard A103
7
Volts JEDEC Standard A114
VZAP_MM(1)
ESD Susceptibility
Machine Model
200
Volts JEDEC Standard A115
8
ILTH(1)
Latch Up
100
mA JEDEC Standard 78
304 PGM T9.1
9
Note: (1)This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
(2)See Ordering Information for desired type.
10
11
12
13
14
15
16
© 1998 Silicon Storage Technology, Inc.
9
304-04 12/97
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