SST29EE010-150-4C-W Ver la hoja de datos (PDF) - Silicon Storage Technology
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SST29EE010-150-4C-W Datasheet PDF : 27 Pages
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1 Megabit Page Mode EEPROM
SST29EE010, SST29LE010, SST29VE010
TABLE 13: PAGE-WRITE CYCLE TIMING PARAMETERS
29EE010
29LE/VE010
Symbol Parameter
Min
Max
Min
Max
Units
1
TWC
Write Cycle (erase and program)
10
10
ms
TAS
Address Setup Time
0
TAH
Address Hold Time
50
0
70
ns
ns
2
TCS
WE# and CE# Setup Time
0
0
ns
TCH
WE# and CE# Hold Time
0
TOES
OE# High Setup Time
0
0
ns
3
0
ns
TOEH
OE# High Hold Time
0
0
ns
TCP
CE# Pulse Width
70
120
ns
4
TWP
WE# Pulse Width
70
120
ns
TDS
Data Setup Time
TDH
Data Hold Time
35
50
ns
5
0
0
ns
TBLC(1)
TBLCO(1)
Byte Load Cycle Time
Byte Load Cycle Time
0.05
100
0.05
100
µs
200
200
µs
6
TIDA
Software ID Access and Exit Time
10
10
µs
TSCE
Software Chip Erase
20
20
ms
7
304 PGM T13.1
Note: (1)This parameter is measured only for initial qualification and after the design or process change that could affect this parameter.
8
9
10
11
12
13
14
15
16
© 1998 Silicon Storage Technology, Inc.
11
304-04 12/97
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